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1. product pro?le 1.1 general description npn low v cesat breakthrough in small signal (biss) transistor in a medium power sot89 (sc-62/to-243) ?at lead surface-mounted device (smd) plastic package. pnp complement: 2pb1424. 1.2 features n low collector-emitter saturation voltage v cesat n high collector current capability i c and i cm n high collector current gain (h fe ) at high i c n high ef?ciency due to less heat generation n smaller required printed-circuit board (pcb) area than for conventional transistors 1.3 applications n dc-to-dc conversion n mosfet gate driving n motor control n charging circuits n power switches (e.g. motors, fans) n thin film transistor (tft) backlight inverter 1.4 quick reference data [1] pulse test: t p 300 m s; d 0.02. 2PD2150 20 v, 3 a npn low v cesat (biss) transistor rev. 02 2 january 2007 product data sheet table 1. quick reference data symbol parameter conditions min typ max unit v ceo collector-emitter voltage open base - - 20 v i c collector current - - 3 a i cm peak collector current single pulse; t p 1ms --5a v cesat collector-emitter saturation voltage i c = 2 a; i b = 0.1 a [1] - 0.2 0.5 v
2PD2150_2 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 02 2 january 2007 2 of 13 nxp semiconductors 2PD2150 20 v, 3 a npn low v cesat (biss) transistor 2. pinning information 3. ordering information 4. marking 5. limiting values [1] device mounted on an fr4 pcb, single-sided copper, tin-plated and standard footprint. [2] device mounted on a ceramic pcb, al 2 o 3 , standard footprint. table 2. pinning pin description simpli?ed outline symbol 1 emitter 2 collector 3 base 321 sym042 1 2 3 table 3. ordering information type number package name description version 2PD2150 sc-62 plastic surface-mounted package; collector pad for good heat transfer; 3 leads sot89 table 4. marking codes type number marking code 2PD2150 m2 table 5. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v cbo collector-base voltage open emitter - 40 v v ceo collector-emitter voltage open base - 20 v v ebo emitter-base voltage open collector - 6 v i c collector current - 3 a i cm peak collector current single pulse; t p 1ms -5a p tot total power dissipation t amb 25 c [1] - 0.5 w [2] -2w t j junction temperature - 150 c t amb ambient temperature - 65 +150 c t stg storage temperature - 65 +150 c
2PD2150_2 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 02 2 january 2007 3 of 13 nxp semiconductors 2PD2150 20 v, 3 a npn low v cesat (biss) transistor 6. thermal characteristics [1] device mounted on an fr4 pcb, single-sided copper, tin-plated and standard footprint. [2] device mounted on a ceramic pcb, al 2 o 3 , standard footprint. (1) ceramic pcb, al 2 o 3 , standard footprint (2) fr4 pcb, standard footprint fig 1. power derating curves 006aaa943 t amb ( c) - 75 175 125 25 075 - 25 0.8 1.6 2.4 p tot (w) 0 (2) (1) table 6. thermal characteristics symbol parameter conditions min typ max unit r th(j-a) thermal resistance from junction to ambient in free air [1] - - 250 k/w [2] --62k/w
2PD2150_2 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 02 2 january 2007 4 of 13 nxp semiconductors 2PD2150 20 v, 3 a npn low v cesat (biss) transistor fr4 pcb, standard footprint fig 2. transient thermal impedance from junction to ambient as a function of pulse duration; typical values ceramic pcb, al 2 o 3 , standard footprint fig 3. transient thermal impedance from junction to ambient as a function of pulse duration; typical values 006aaa944 10 1 10 2 10 3 z th(j-a) (k/w) 10 - 1 10 - 5 10 10 - 2 10 - 4 10 2 10 - 1 t p (s) 10 - 3 10 3 1 0 duty cycle = 1 0.5 0.2 0.1 0.75 0.33 0.05 0.02 0.01 006aaa945 10 - 5 10 10 - 2 10 - 4 10 2 10 - 1 t p (s) 10 - 3 10 3 1 10 1 10 2 z th(j-a) (k/w) 10 - 1 0.02 0.2 0.1 0.05 duty cycle = 1 0.5 0.75 0.33 0.01 0
2PD2150_2 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 02 2 january 2007 5 of 13 nxp semiconductors 2PD2150 20 v, 3 a npn low v cesat (biss) transistor 7. characteristics [1] pulse test: t p 300 m s; d 0.02. table 7. characteristics t amb =25 c unless otherwise speci?ed. symbol parameter conditions min typ max unit i cbo collector-base cut-off current v cb =30v; i e = 0 a - - 0.1 m a i ebo emitter-base cut-off current v eb =5v; i c = 0 a - - 0.1 m a h fe dc current gain v ce =2v; i c = 0.1 a 180 - 390 v cesat collector-emitter saturation voltage i c = 2 a; i b = 0.1 a [1] - 0.2 0.5 v f t transition frequency v ce =2v; i e = - 0.5 a; f = 100 mhz - 220 - mhz c ib common-base input capacitance v eb =5v; i e =i e =0a; f=1mhz - 180 - pf c ob common-base output capacitance v cb =10v;i e =i e =0a; f=1mhz -20-pf
2PD2150_2 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 02 2 january 2007 6 of 13 nxp semiconductors 2PD2150 20 v, 3 a npn low v cesat (biss) transistor v ce =2v (1) t amb = 100 c (2) t amb =25 c (3) t amb = - 40 c t amb =25 c fig 4. collector current as a function of base-emitter voltage; typical values fig 5. collector current as a function of collector-emitter voltage; typical values t amb =25 cv ce =2v (1) t amb = 100 c (2) t amb =25 c (3) t amb = - 40 c fig 6. collector current as a function of collector-emitter voltage; typical values fig 7. dc current gain as a function of collector current; typical values 006aaa956 10 10 2 10 3 10 4 i c (ma) 1 v be (v) 0 1.4 1.2 1.0 0.4 0.2 0.8 0.6 (1) (2) (3) v ce (v) 0 1.0 0.8 0.4 0.6 0.2 006aaa957 0.8 1.2 0.4 1.6 2.0 i c (a) 0 i b (ma) = 20 2 4 6 8 18 16 14 12 10 v ce (v) 05 4 23 1 006aaa958 2 3 1 4 5 i c (a) 0 i b (ma) = 5 10 15 20 25 50 45 40 35 30 006aaa959 10 2 10 10 3 h fe 1 i c (ma) 110 4 10 3 10 10 2 (1) (2) (3)
2PD2150_2 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 02 2 january 2007 7 of 13 nxp semiconductors 2PD2150 20 v, 3 a npn low v cesat (biss) transistor i c /i b =10 (1) t amb = 100 c (2) t amb =25 c (3) t amb = - 40 c i c /i b =20 (1) t amb = 100 c (2) t amb =25 c (3) t amb = - 40 c fig 8. collector-emitter saturation voltage as a function of collector current; typical values fig 9. collector-emitter saturation voltage as a function of collector current; typical values i c /i b =50 (1) t amb = 100 c (2) t amb =25 c (3) t amb = - 40 c t amb =25 c; v ce =2v fig 10. collector-emitter saturation voltage as a function of collector current; typical values fig 11. transition frequency as a function of emitter current; typical values 006aaa960 10 - 1 10 - 2 1 v cesat (v) 10 - 3 i c (ma) 110 4 10 3 10 10 2 (1) (2) (3) 006aaa961 10 - 1 10 - 2 1 v cesat (v) 10 - 3 i c (ma) 110 4 10 3 10 10 2 (1) (2) (3) 006aaa962 10 - 1 10 - 2 1 v cesat (v) 10 - 3 i c (ma) 110 4 10 3 10 10 2 (1) (2) (3) 006aaa963 i e (ma) - 1 - 10 3 - 10 2 - 10 10 2 10 10 3 f t (mhz) 1
2PD2150_2 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 02 2 january 2007 8 of 13 nxp semiconductors 2PD2150 20 v, 3 a npn low v cesat (biss) transistor t amb =25 c; f = 1 mhz; i e =i e =0a t amb =25 c; f = 1 mhz; i e =i e =0a fig 12. common-base input capacitance as a function of emitter-base voltage; typical values fig 13. common-base output capacitance as a function of collector-base voltage; typical values 006aaa964 v eb (v) 10 - 1 10 2 10 1 10 2 10 3 c ib (pf) 10 006aaa965 v cb (v) 10 - 1 10 2 10 1 10 2 10 3 c ob (pf) 10
2PD2150_2 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 02 2 january 2007 9 of 13 nxp semiconductors 2PD2150 20 v, 3 a npn low v cesat (biss) transistor 8. package outline 9. packing information [1] for further information and the availability of packing methods, see section 13 . fig 14. package outline sot89 (sc-62/to-243) 06-08-29 dimensions in mm 4.6 4.4 1.8 1.4 1.6 1.4 1.2 0.8 3 1.5 0.48 0.35 0.44 0.23 0.53 0.40 2.6 2.4 4.25 3.75 123 table 8. packing methods the indicated -xxx are the last three digits of the 12nc ordering code. [1] type number package description packing quantity 1000 4000 2PD2150 sot89 8 mm pitch, 12 mm tape and reel -115 -135
2PD2150_2 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 02 2 january 2007 10 of 13 nxp semiconductors 2PD2150 20 v, 3 a npn low v cesat (biss) transistor 10. soldering sot89 standard mounting conditions for re?ow soldering fig 15. re?ow soldering footprint sot89 (sc-62/to-243) not recommended for wave soldering fig 16. wave soldering footprint sot89 (sc-62/to-243) msa442 1.00 (3x) 4.85 4.60 1.20 4.75 0.60 (3x) 0.70 (3x) 3.70 3.95 1.20 0.50 1.70 1 32 0.20 0.85 1.20 1.20 1.90 2.00 2.25 solder lands solder resist occupied area solder paste dimensions in mm msa423 preferred transport direction during soldering 3.00 7.60 6.60 1.20 5.30 1.50 0.50 3.50 2.40 1 3 2 0.70 solder lands solder resist occupied area dimensions in mm
2PD2150_2 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 02 2 january 2007 11 of 13 nxp semiconductors 2PD2150 20 v, 3 a npn low v cesat (biss) transistor 11. revision history table 9. revision history document id release date data sheet status change notice supersedes 2PD2150_2 20070102 product data sheet - 2PD2150_1 modi?cations: ? the format of this data sheet has been redesigned to comply with the new identity guidelines of nxp semiconductors. ? legal texts have been adapted to the new company name where appropriate. ? t ab le 1 quic k ref erence data : i c collector current added ? t ab le 1 quic k ref erence data : i cm peak collector current maximum value adapted ? t ab le 1 quic k ref erence data : v cesat collector-emitter saturation voltage added ? t ab le 5 limiting v alues : v ceo collector-emitter voltage maximum value adapted ? t ab le 5 limiting v alues : i c collector current maximum value adapted ? t ab le 5 limiting v alues : i cm peak collector current maximum value adapted ? t ab le 5 limiting v alues : p tot total power dissipation for ceramic pcb condition added ? figure 1 p o w er der ating cur v es : adapted ? t ab le 6 ther mal char acter istics : adapted ? t ab le 6 ther mal char acter istics : r th(j-a) thermal resistance from junction to ambient for ceramic pcb condition added ? figure 2 : t p pulse time rede?ned to pulse duration ? figure 3 : added ? t ab le 7 char acter istics : v cesat collector-emitter saturation voltage typical value added ? t ab le 7 char acter istics : f t transition frequency conditions slightly changed ? t ab le 7 char acter istics : c ib common-base input capacitance added ? t ab le 7 char acter istics : c ob common-base output capacitance added ? figure 4 , 6 , 10 , 11 , 12 , 13 and 16 : added ? figure 5 , 7 , 8 and 9 : adapted ? section 12 legal inf or mation : updated 2PD2150_1 20050422 product data sheet - -
2PD2150_2 ? nxp b.v. 2007. all rights reserved. product data sheet rev. 02 2 january 2007 12 of 13 nxp semiconductors 2PD2150 20 v, 3 a npn low v cesat (biss) transistor 12. legal information 12.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term short data sheet is explained in section de?nitions. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple dev ices. the latest product status information is available on the internet at url http://www .nxp .com . 12.2 de?nitions draft the document is a draft version only. the content is still under internal review and subject to formal approval, which may result in modi?cations or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. short data sheet a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request via the local nxp semiconductors sales of?ce. in case of any inconsistency or con?ict with the short data sheet, the full data sheet shall prevail. 12.3 disclaimers general information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. right to make changes nxp semiconductors reserves the right to make changes to information published in this document, including without limitation speci?cations and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use nxp semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customers own risk. applications applications that are described herein for any of these products are for illustrative purposes only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the speci?ed use without further testing or modi?cation. limiting values stress above one or more limiting values (as de?ned in the absolute maximum ratings system of iec 60134) may cause permanent damage to the device. limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the characteristics sections of this document is not implied. exposure to limiting values for extended periods may affect device reliability. terms and conditions of sale nxp semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www .nxp .com/pro? le/ter ms , including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by nxp semiconductors. in case of any inconsistency or con?ict between information in this document and such terms and conditions, the latter will prevail. no offer to sell or license nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 12.4 trademarks notice: all referenced brands, product names, service names and trademarks are the property of their respective owners. 13. contact information for additional information, please visit: http://www .nxp.com for sales of?ce addresses, send an email to: salesad dresses@nxp.com document status [1] [2] product status [3] de?nition objective [short] data sheet development this document contains data from the objective speci?cation for product development. preliminary [short] data sheet quali?cation this document contains data from the preliminary speci?cation. product [short] data sheet production this document contains the product speci?cation.
nxp semiconductors 2PD2150 20 v, 3 a npn low v cesat (biss) transistor ? nxp b.v. 2007. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com date of release: 2 january 2007 document identifier: 2PD2150_2 please be aware that important notices concerning this document and the product(s) described herein, have been included in section legal information. 14. contents 1 product pro?le . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description. . . . . . . . . . . . . . . . . . . . . . 1 1.2 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 quick reference data. . . . . . . . . . . . . . . . . . . . . 1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 6 thermal characteristics. . . . . . . . . . . . . . . . . . . 3 7 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 8 package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 9 packing information. . . . . . . . . . . . . . . . . . . . . . 9 10 soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 11 revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 12 legal information. . . . . . . . . . . . . . . . . . . . . . . 12 12.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 12.2 de?nitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 12.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 12.4 trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 13 contact information. . . . . . . . . . . . . . . . . . . . . 12 14 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

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